Electrical properties of a high-precision hexagonal spiral silicon drift detector
نویسندگان
چکیده
With the deepening and expansion of semiconductor technology research, in order to continuously optimize structure performance detectors, a high-precision hexagonal spiral silicon drift detector (SDD) is proposed this paper. In obtain more accurate ring structure, paper goes beyond first-order formula Taylor for calculating radius ring. Based on formula, second-order further developed derived. The point coordinates are obtained by combining radius, angle, spacing change structure. actual number turns than that from approximation, which better solves problem calculation rings SDD existing technology, is, verify abovementioned theory, we model new use Technology Computer-Aided Design system simulate study its electrical properties, including potential distribution, electric field electron concentration distribution. According simulation results, compared with has properties; uniform distribution potential, field, concentration; clearer channel.
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ژورنال
عنوان ژورنال: Frontiers in Materials
سال: 2023
ISSN: ['2296-8016']
DOI: https://doi.org/10.3389/fmats.2023.1186668